METHODS FOR TEXTURING A SEMICONDUCTOR MATERIAL
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United States of America Patent
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Issued Date -
Dec 12, 2013
app pub date -
Jun 12, 2012
filing date -
Jun 12, 2012
priority date (Note) -
Abandoned
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Abstract
A method for modifying the texture of a semiconductor material is provided. The method includes performing a first texture step comprising reactive ion etching to a first surface of semiconductor material. After the first texture step, the first surface of the semiconductor material has a random texture comprising a plurality of peaks and a plurality of valleys, and wherein at least fifty percent of the first surface has a peak-to-valley height of less than one micron and an average peak-to-peak distance of less than one micron. Additional texture steps comprising wet etch or RIE etching may be optionally applied.
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