SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS
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United States of America Patent
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Issued Date -
Dec 12, 2013
app pub date -
Feb 2, 2012
filing date -
Feb 28, 2011
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Abandoned
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Abstract
An embodiment of semiconductor laser comprising: (a) a GaN, AlGaN, InGaN, or AlN substrate; (b) an n-doped cladding layer situated over the substrate; (c) a p-doped cladding layer situated over the n-doped; (d) at least one active layer situated between the n-doped and the p-doped cladding layer, and at least one of said cladding layers comprises a superstructure structure of AlInGaN/GaN, AlInGaN/AlGaN, AlInGaN//InGaN or AlInGaN/AlN with the composition such that the total of lattice mismatch strain of the whole structure does not exceed 40 nm %.
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