Method Of Manufacturing Gallium Nitride Substrate And Gallium Nitride Substrate Manufactured Thereby
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United States of America Patent
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Issued Date -
Dec 12, 2013
app pub date -
Jun 7, 2013
filing date -
Jun 12, 2012
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Abstract
A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured thereby. The method includes the steps of growing an aluminum nitride nucleation layer on a base substrate, growing a first gallium nitride film on the base substrate on which the aluminum nitride nucleation layer has been grown, the first gallium nitride film having a first content ratio of nitrogen to gallium, and growing a second gallium nitride film on the first gallium nitride film, the second gallium nitride film having a second content ratio of nitrogen to gallium which is lower than the first content ratio. Self-separation between the base substrate and the GaN substrate is possible during the growth process, thereby precluding mechanical separation, increasing a self-separation area, and minimizing the occurrence of warping.
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