Thin-Film Photovoltaic Devices and Methods of Manufacture
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United States of America Patent
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Dec 12, 2013
app pub date -
Feb 27, 2012
filing date -
Feb 28, 2011
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Abstract
Improved thin-film photovoltaic devices and methods of manufacturing such devices are described. Embodiments include a substrate-configured thin-film PV device (200) having a photo-absorbing semiconductor layer (230) and a window layer (240). Embodiments include devices having a CdTe photo-absorbing semiconductor layer, a CdS or CdS:In window layer, and an n-p junction residing at or proximate an interface of the photo-absorbing semiconductor and window layers. Variations include methods of manufacture wherein i) O2 is excluded from an ambient environment during deposition of the CdTe layer (102), ii) O2 is included in an ambient environment during CdCl2 treatment (103), iii) O2 is included in an ambient environment during deposition of a CdS or CdS:In layer (104), or iv) a medium-temperature anneal (MTA) having an anneal temperature of 300° C. or less is performed (105) after deposition of the CdS layer.
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