Method Of Manufacturing Thin-Film Bonded Substrate Used For Semiconductor Device
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United States of America Patent
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Issued Date -
Dec 5, 2013
app pub date -
May 28, 2013
filing date -
May 29, 2012
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Abandoned
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Abstract
A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other.
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