LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 5, 2013
app pub date -
May 31, 2012
filing date -
May 31, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n-side cladding layer including (Al,In)GaN having an n-type conductivity, an n-side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p-side waveguide layer including (Al,In)GaN having a p-type conductivity, a p-side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets. The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 20
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully