SEMICONDUCTOR DEVICE HAVING NON-ORTHOGONAL ELEMENT

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United States of America Patent

SERIAL NO

13486185

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Abstract

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The present disclosure provides a device includes a first gate structure segment and a collinear second gate structure segment, as well as a third gate structure segment and a collinear fourth gate structure segment. An interconnection extends from the first gate structure segment to the fourth gate structure segment. The interconnection is disposed above the first gate structure segment and the fourth gate structure segment. The interconnection may be formed on or co-planar with a contact layer of the semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuei-Shun Hsin-Chu, TW 77 560
Liu, Chia-Chu Shin-Chu City, TW 46 509
Wu, Hong-Jang Linbian Township, TW 3 106
Yeh, Shiao-Chian Kaohsiung City, TW 5 107

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