pHEMT HBT INTEGRATED EPITAXIAL STRUCTURE AND A FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Dec 5, 2013
app pub date -
Oct 26, 2012
filing date -
Jun 1, 2012
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Abandoned
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Abstract
An improved pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) integrated epitaxial structure and the fabrication method thereof, in which the structure comprises a substrate, a pHEMT structure, an etching-stop spacer layer, and an HBT structure. The pHEMT's structure comprises a buffer layer, a barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a Schottky barrier layer, an etching-stop layer, and at least one cap layer. The fabrication method of an HBT and a pHEMT are also included.
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