Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (TAIC)
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United States of America Patent
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Jul 21, 2015
Grant Date -
Dec 5, 2013
app pub date -
May 30, 2013
filing date -
Jun 3, 2012
priority date (Note) -
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Abstract
A seed layer structure is annealed. The seed layer structure comprises a crystallization catalyst material on a seed semiconductor over a substrate. The seed semiconductor comprises an amorphous portion. Annealing of the seed layer structure converts the amorphous portion into a crystalline portion. The crystalline portion is connected to the substrate by subsurface crystal legs. The crystallization catalyst material formed underneath the crystalline portion by annealing is removed from the underneath of the crystalline portion.
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