TID HARDENED MOS TRANSISTORS AND FABRICATION PROCESS
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United States of America Patent
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app pub date -
May 16, 2013
filing date -
May 25, 2012
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Abandoned
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Abstract
A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon gate is disposed above, aligned with, and insulated from the channel region. A p-type isolation ring is disposed in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region.
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