ELECTRODE CONTACT STRUCTURE OF LIGHT-EMITTING DIODE
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United States of America Patent
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Issued Date -
Nov 28, 2013
app pub date -
May 23, 2012
filing date -
May 23, 2012
priority date (Note) -
Abandoned
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Abstract
A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
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