BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND PRODUCTION PROCESS THEREFOR
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United States of America Patent
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Issued Date -
Nov 28, 2013
app pub date -
Mar 2, 2012
filing date -
Mar 7, 2011
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Abandoned
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Abstract
A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a <11-20> plane which is the a-plane, a <1-100> plane which is the m-plane, or a <11-22> plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor.
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