Nanowire-based Transistor, Method for Fabricating the Transistor, Semiconductor Component Incorporating the Transistor, Computer Program and Storage Medium Associated with the Fabrication Method
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United States of America Patent
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Issued Date -
Nov 28, 2013
app pub date -
May 24, 2013
filing date -
May 25, 2012
priority date (Note) -
Abandoned
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Abstract
The transistor (100) comprises a nanowire (101) at least partially forming a channel of the transistor (100), a source contact (102) arranged at a first longitudinal end (103) of the nanowire (101), a drain contact (104) arranged at a second longitudinal end (105) of the nanowire (101), and a gate (106) arranged on the nanowire (101) between the source contact (102) and the drain contact (104). Furthermore, a portion of the gate (106) covers, with the interposition of a dielectric material (107), a corresponding portion of the source contact (102) and/or of the drain contact (104) arranged along the nanowire (101) between its two longitudinal ends (103, 105).
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