GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS

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United States of America Patent

SERIAL NO

13950862

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Abstract

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A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

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Patent OwnerAddress
TEL EPION INCBILLERICA MASSACHUSETTS 01821

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MacCrimmon, Ruairidh Arlington, US 9 58
Olsen, Christopher K Peabody, US 11 135
Shao, Yan Andover, US 47 172
Tabat, Martin D Nashua, US 22 433

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