System and Method for Monolithic Crystal Growth
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United States of America Patent
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Issued Date -
Nov 21, 2013
app pub date -
Nov 5, 2012
filing date -
Nov 4, 2011
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Abandoned
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Abstract
A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.
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