TENSION RELEASE LAYER STRUCTURE OF LIGHT-EMITTING DIODE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 21, 2013
app pub date -
May 15, 2012
filing date -
May 15, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully