METHOD FOR FABRICATING SUBSTRATE FOR SOLAR CELL AND SOLAR CELL
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United States of America Patent
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Issued Date -
Nov 21, 2013
app pub date -
Jan 27, 2012
filing date -
Jan 31, 2011
priority date (Note) -
Published
status (Latency Note)
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Abstract
The problem addressed by the present invention is providing a technique for fabricating, by a method simpler than conventional methods, a silicon substrate that is effective for light trapping, one surface of which has a textured structure and the other surface of which has higher reflectivity than the surface having the textured structure. The fabrication method for this semiconductor substrate comprises: a sandblasting step in which a first surface of a silicon substrate in an as-sliced state, fabricated by slicing a silicon ingot, is surface treated by sandblasting and, after the sandblasting step, a step for carrying out surface treatment using an etching solution that contains either or both of hydrofluoric acid and nitric acid on the silicon substrate.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
FUJI MANUFACTURING CO LTD | 2-24 MATSUE 5-CHOME EDOGAWA-KU TOKYO 1320025 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Asai, Hideyuki | Fukuoka, JP | 6 | 62 |
Harada, Takayuki | Tokyo, JP | 11 | 142 |
Ishibashi, Shozo | Tokyo, JP | 28 | 167 |
Kondo, Yoichi | Fukuoka, JP | 7 | 49 |
Mase, Keiji | Tokyo, JP | 51 | 265 |
Sakata, Isao | Ibaraki, JP | 22 | 368 |
Takato, Hidetaka | Ibaraki, JP | 8 | 83 |
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