EEPROM MEMORY UNIT AND EEPROM MEMORY DEVICE

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United States of America Patent

APP PUB NO 20130301355A1
SERIAL NO

13846549

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Abstract

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An EEPROM memory unit is disclosed. The EEPROM memory unit includes a first memory cell, a second memory cell, and a word line controller. The first memory cell includes a source that is connected to a first bit line of the EEPROM memory unit and a drain that is connected to a source of the word line controller. The word line controller includes a drain that is connected to a source of the second memory cell. The second memory cell includes a drain that is connected to a second bit line of the EEPROM memory unit. An EEPROM memory device is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
GRACE SEMICONDUCTOR MANUFACTURING CORPORATIONNO 818 GUOSHOUJING ROAD ZHANGJIANG HIGH-TECH PARK SHANGHAI 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Guangiun Shanghai, CN 1 1

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