Importance

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Abstract

Disclosed is a memory element, a stack, and to a memory matrix in which the memory element can be used. Also disclosed is a method for operating the memory matrix, and to a method for determining the true value of a logic operation in an array comprising memory elements. The memory element has at least a first stable state 0 and a second stable state 1. By applying a first write voltage V₀, this memory element can be transferred into the high-impedance state 0 and by applying a second write voltage V₁, it can be transferred into the likewise high-impedance state 1. By applying a read voltage V_R, the magnitude of which is smaller than the write voltages V₀ and V₁, the memory element exhibits different electrical resistance values. In the parasitic current paths occurring in a memory matrix, the memory element acts as a high-impedance resistor, without in principle being limited to unipolar switching. A method has been disclosed, using an array comprising the memory elements which can be turned into a gate for arbitrary logic operations.

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First Claim