Importance

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Abstract

Semiconductor structures and methods of fabrication are provided. One semiconductor structure includes a substrate, a semiconductor device layer supported by the substrate, and one or more buried through substrate vias (TSVs) disposed at least partially within the substrate. The buried through substrate via(s) is buried within the semiconductor substrate, and terminates below the semiconductor device layer of the semiconductor structure, and the semiconductor device layer extends over the buried through substrate via(s), thereby providing the buried through substrate via(s) without consuming space within the semiconductor device layer. A dielectric layer may be disposed between the substrate and the semiconductor device layer, with the TSV(s) terminating at a first end within the dielectric layer. Alternatively, the semiconductor device layer may be an epitaxially-grown layer extending over the TSV(s). Where a plurality of buried TSV(s) are employed, the vias may be disposed in a repeating pattern across the semiconductor structure.

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First Claim