SILICON MELT CONTACT MEMBER, PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON
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United States of America Patent
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Issued Date -
Nov 14, 2013
app pub date -
Jan 26, 2012
filing date -
Jan 26, 2011
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Abstract
Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity, by use of the silicon melt contact member. A silicon melt contact member having a porous sintered body layer present on its surface, preferably the sintered body layer being present on a substrate of a ceramic material such as aluminum nitride, wherein the porous sintered body layer consists essentially of silicon nitride, has a thickness of 10 to 500 μm, and has, dispersed therein, many pores preferably having an average equivalent circle diameter of 1 to 25 μm at a pore-occupying area ratio of 30 to 80%, the pores connecting to each other to form communicating holes having a depth of 5 μm or more.
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