PROCESSES TO FORM AQUEOUS PRECURSORS, HAFNIUM AND ZIRCONIUM OXIDE FILMS, AND HAFNIUM AND ZIRCONIUM OXIDE PATTERNS
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
Dec 23, 2011
filing date -
Dec 23, 2010
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Abandoned
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Abstract
Embodiments of a method for synthesizing aqueous precursors comprising Hf4+ or Zr4+ cations, peroxide, and a monoprotic acid are disclosed. The aqueous precursors are suitable for making HfO2 and ZrO2 thin films, which subsequently can be patterned. The disclosed thin films are dense and continuous, with a surface roughness of ≦0.5 nm and a refractive index of 1.85-2.0 at λ=550 nm. Some embodiments of the disclosed thin films have a leakage-current density ≦20 nA/cm2 at 1 MV/cm, with a dielectric breakdown ≧3 MV/cm. The thin films can be patterned with radiation to form dense lines and space patterns.
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