LARGE FIELD PROJECTION OBJECTIVE FOR LITHOGRAPHY
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
Dec 7, 2011
filing date -
Dec 31, 2010
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Abstract
A lithography projection objective (30) for focusing and imaging a pattern of a reticle onto a wafer including, from the reticle and along an optical axis: a first lens group G31 having a positive refractive power; a second lens group G32 having a positive refractive power; a third lens group G33 having a positive refractive power; and a fourth lens group G34 having a positive refractive power. These four lens groups form a 2× magnification design which has a partial field of view of not smaller than 100 mm; a wavelength band of I-line±5 nm can ensure a sufficient exposure light intensity. Moreover, the present invention also achieves, with a relatively simple structure, the demanded millimeter-level resolution as well as the correction of distortions, field curvatures, astigmatisms and chromatic aberrations in a large field.
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