Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
May 5, 2012
filing date -
May 5, 2012
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Abandoned
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Abstract
The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
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