PHASE CHANGE MEMORY CELL AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
Jun 23, 2011
filing date -
Jan 18, 2011
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Abandoned
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Abstract
The present invention provides a phase change memory cell and fabrication method thereof, wherein said phase change memory cell comprises a semiconductor substrate, a first electrode layer, a phase change material layer, a second electrode layer and an extraction electrode, as well as a high resistance material layer used to prevent said phase change material layer from over-corrosion during the chemical mechanical polishing process, and wherein said high resistance material layer has a resistance ten or more times that of the phase change material layer and can be used to prevent phase change material layer from over-corrosion during the chemical mechanical polishing process and thus enhance the memory performance and the yield of phase change memory cell.
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