SiOx n-LAYER FOR MICROCRYSTALLINE PIN JUNCTION
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United States of America Patent
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Issued Date -
Nov 7, 2013
app pub date -
Dec 23, 2011
filing date -
Dec 29, 2010
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Abandoned
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Abstract
The present invention concerns a light conversion device comprising at least direction of impinging light one photovoltaic light conversion layer stack (43, 51) comprising a p-i-n junction and situated between a front (42) and back (47) electrode, wherein the n-layer (49) of the layer stack (43) situated closest to the back electrode (47) consists of a n-doped silicon- and oxygen-containing (SiOx) microcrystalline layer, and is in direct contact with the back electrode (47). The invention equally concerns a corresponding method for manufacturing such a light conversion device. The requirement for intermediate adhesion/interface layers between SiOx layer and back electrode can thus be obviated, resulting in simplified manufacture.
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