APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR

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United States of America Patent

APP PUB NO 20130280896A1
SERIAL NO

13824383

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.

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Patent Owner(s)

Patent OwnerAddress
JNC CORPORATION2-1 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 100-8105
TOHO TITANIUM CO LTDKANAGAWA
JX NIPPON MINING & METALS CORPORATION6-3 OTEMACHI 2-CHOME CHIYODA-KU TOKYO 1008164

International Classification(s)

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  • 2011 Application Filing Year
  • H01L Class
  • 19146 Applications Filed
  • 15997 Patents Issued To-Date
  • 83.56 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20112012201320142015201620172018201920202021202220230255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohkubo, Shuichi Ibaraki, JP 59 241
Yamaguchi, Masatsugu Ibaraki, JP 6 43

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  • H01L Class
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  • 12 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4074140169277539225214911984534318001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0250500750100012501500175020002250250027503000325035003750400042504500

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