METHOD FOR PRODUCTION OF SELECTIVE GROWTH MASKS USING IMPRINT LITHOGRAPHY
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United States of America Patent
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Issued Date -
Oct 24, 2013
app pub date -
Apr 22, 2013
filing date -
Apr 23, 2012
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Abandoned
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Abstract
The present invention discloses a method for production of selective growth masks using imprint lithography. The method includes steps of: providing a sapphire substrate, forming a GaN layer, an insulation layer, and a photo-resistive layer, performing imprint lithography, performing exposure and development, performing dry etching, and removing the remained photo-resistive layer. The selective growth masks produced by the method of the present invention make the growth of nanowires cylindrical and perpendicular to the GaN layer, and each nanowire is parallel to one another.
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