Method For Releasing a Thin-Film Substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 24, 2013
app pub date -
Oct 22, 2012
filing date -
Oct 9, 2006
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully