STRUCTURE OF BACKSIDE COPPER METALLIZATION FOR SEMICONDUCTOR DEVICES AND A FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Oct 24, 2013
app pub date -
Jul 23, 2012
filing date -
Apr 18, 2012
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Abandoned
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Abstract
An improved structure of backside copper metallization for semiconductor devices and a fabrication method thereof, in which the improved structure comprises sequentially from top to bottom an active layer, a substrate, a backside metal seed layer, at least one thermal expansion buffer layer, a backside metal layer, and at least one oxidation resistant layer, in which the backside metal seed layer is formed of Pd, and the thermal expansion coefficient of the thermal expansion buffer layer is in the range between the thermal expansion coefficients of the backside metal seed layer and of the backside metal layer. The semiconductor chip using the structure provided by the present invention can sustain high-temperature operations.
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