PRODUCTION METHOD FOR FLAT SUBSTRATE WITH LOW DEFECT DENSITY
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United States of America Patent
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Issued Date -
Oct 24, 2013
app pub date -
Apr 22, 2013
filing date -
Apr 23, 2012
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Abandoned
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Abstract
The present invention discloses a production method for a flat substrate with low defect density. The method includes steps of: providing a substrate, performing selective growth of nanowires, performing lateral epitaxial growth of the nanowires, performing lateral coalescence of widened nanowires, performing high temperature annealing, and performing LED structure growth. The production method of the present invention generates vertical and lateral growth of the nanowires by choosing different concentrations of additives to produce a flat film, and generate a high efficiency LED semiconductor structure after annealing the flat film.
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