Method to realize flux free indium bumping

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United States of America Patent

PATENT NO 8900986
SERIAL NO

13880451

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Abstract

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A method to realize flux free indium bumping process includes several steps including substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation and Ag layer coating. The method can be used in the occasion for some special application, e.g., the packaging of the photoelectric chip (with optical lens), MEMS and biological detection chip, where the usage of flux is prohibited.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES200050 NO 865 CHANGNING ROAD SHANGHAI CHANGNING DISTRICT MUNICIPAL DISTRICT SHANGHAI CITY 200050

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Qiuping Shanghai, CN 106 270
Luo, Le Shanghai, CN 5 4
Xu, Gaowei Shanghai, CN 3 3
Yuan, Yuan Shanghai, CN 219 2174

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