Method for forming a single crystal by spraying the raw material onto a seed substrate
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United States of America Patent
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May 30, 2017
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Oct 10, 2013
app pub date -
Apr 19, 2013
filing date -
Nov 2, 2010
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Abstract
A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.
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