SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS
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United States of America Patent
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Issued Date -
Oct 3, 2013
app pub date -
Feb 22, 2013
filing date -
Mar 28, 2012
priority date (Note) -
Abandoned
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Abstract
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a reaction chamber gaseous reagents comprising a porogenated precursor; optionally a structure former precursor selected from the group consisting an organosilane, an organosiloxane, and combinations thereof; and optionally a porogen precursor; applying an energy source to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film at least a portion of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.
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