THERMAL INTERFACE MATERIAL FOR SEMICONDUCTOR CHIP AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Oct 3, 2013
app pub date -
Jun 22, 2009
filing date -
Jun 23, 2008
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Abandoned
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Abstract
Disclosed is a method for forming a thermal interface material for a semiconductor chip, comprising the steps of forming an initial layer on a substrate, the initial layer including carbon nanotubes and nano metal powder; arranging a semiconductor chip on the initial layer; and heat-treating the initial layer with a sintering temperature of the nano metal powder to obtain a thermal interface material of the carbon nanotubes and the nano metal powder.
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