SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Oct 3, 2013
app pub date -
Mar 26, 2013
filing date -
Mar 28, 2012
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Abstract
A semiconductor device includes: a gate electrode that is provided on a semiconductor layer, and contains a Ni-containing layer; an insulating film that covers the gate electrode, and has a step; a covering layer that is provided between the gate electrode and the insulating film, and is arty one of a metal which has a melting point equal to or more than 1,600 degrees, and an oxide and a nitride of the metal; and a metal layer that is provided on the step.
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