COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 3, 2013
app pub date -
Dec 21, 2012
filing date -
Mar 28, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An embodiment of a compound semiconductor device includes: a substrate; an electron transport layer formed over the substrate; an electron supply layer formed over the electron transport layer; a source electrode and a drain electrode formed over the electron supply layer; a gate electrode formed over the electron supply layer between the source electrode and the drain electrode; a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode; and a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully