COMPOUND SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Oct 3, 2013
app pub date -
Dec 21, 2012
filing date -
Mar 28, 2012
priority date (Note) -
Abandoned
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Abstract
An embodiment of a compound semiconductor device includes: a substrate; an electron transport layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed over the electron supply layer; a p-type semiconductor layer formed between the electron supply layer and the gate electrode; and a hole canceling layer formed between the electron supply layer and the p-type semiconductor layer, the hole canceling layer containing a donor or a recombination center and canceling a hole.
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