METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
May 14, 2013
filing date -
Sep 1, 2008
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Abstract
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
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