NON-VOLATILE MEMORY DEVICE AND ARRAY THEREOF
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United States of America Patent
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Issued Date -
Sep 26, 2013
app pub date -
Mar 20, 2012
filing date -
Mar 20, 2012
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Abandoned
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Abstract
A non-volatile memory device including a first electrode, a resistor structure, a diode structure, and a second electrode is provided. The resistor structure is disposed on the first electrode. The resistor structure includes a first oxide layer. The first oxide layer is disposed on the first electrode. The diode structure is disposed on the resistor structure. The diode structure includes a metal layer and a second oxide layer. The metal layer is disposed on the first oxide layer. The second oxide layer is disposed on the metal layer. The second electrode is disposed on the diode structure. A material of the metal layer is different from that of the second electrode. Furthermore, a non-volatile memory array including the foregoing memory devices is also provided.
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