RF switch implementation in CMOS process
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United States of America Patent
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Sep 15, 2015
Grant Date -
Sep 19, 2013
app pub date -
Sep 21, 2010
filing date -
Sep 21, 2010
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Abstract
A dual pole dual through switch for switching between at least four states. The switch comprises four transistors such as N-channel Metal Oxide Semiconductor transistors, such that at each state at most one transistor is in “on” state, and the others are in “off” state. Each transistor has its own control circuit, which provides zero or negative voltage to the drain of the transistor, positive voltage to the source of the transistor, and control alternating voltage to the gate of the transistor. The switch can be used on-chip for devices. Such devices may include a base station or a handset of a cordless phone.
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