OXIDATION OF METALLIC FILMS
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United States of America Patent
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Issued Date -
Sep 19, 2013
app pub date -
Nov 24, 2011
filing date -
Nov 24, 2011
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Abstract
Methods for the aqueous oxidation of metallic films are described. For example, a film of hafnium metal on a silicon substrate can be oxidized to hafnium dioxide using hot deionized water. Methods for fabricating electrical components such as capacitors and field effect transistors using the oxidized metallic films are also described. For example, capacitors having a hafnium dioxide dielectric layer can be fabricated.
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