GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE

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United States of America Patent

APP PUB NO 20130243680A1
SERIAL NO

13798702

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Abstract

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A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.

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RICOH COMPANY LTDTOKYO 143-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAYASHI, Masahiro Miyagi, JP 312 1043
KIMURA, Chiharu Miyagi, JP 20 169
MIYOSHI, Naoya Miyagi, JP 32 52
MURAKAMI, Akishige Miyagi, JP 19 372
SARAYAMA, Seiji Miyagi, JP 54 542
SATOH, Takashi Miyagi, JP 128 1447
WADA, Junichi Miyagi, JP 92 1191

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