COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Sep 19, 2013
app pub date -
Dec 19, 2012
filing date -
Mar 19, 2012
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Abstract
The AlGaN/GaN HEMT includes, on an SiC substrate, a laminated compound semiconductor structure and a gate electrode formed on the laminated compound semiconductor structure, wherein a p-type impurity (Mg) and oxygen (O) localize in a lower region of the laminated compound semiconductor structure aligned with the gate electrode, to such a depth as to cause part of a two-dimensional electron gas generated in the laminated compound semiconductor structure to disappear.
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