THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ACTIVE MATRIX DISPLAY PANEL USING THE SAME
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United States of America Patent
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Issued Date -
Sep 19, 2013
app pub date -
Mar 11, 2013
filing date -
Mar 15, 2012
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Abandoned
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Abstract
The present invention provides a thin-film transistor disposed on a substrate. The thin-film transistor includes a gate, a first insulating layer, a metal-oxide semiconductor pattern, a source, a drain, and a second insulating layer. The gate is disposed on the substrate, and the first insulating layer covers the gate. The source and the drain are disposed on the first insulating layer. The metal-oxide semiconductor pattern is disposed on the substrate, and the second insulating layer covers the metal-oxide semiconductor pattern.
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