Bipolar semiconductor device and manufacturing method thereof
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United States of America Patent
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Feb 18, 2014
Grant Date -
Sep 19, 2013
app pub date -
May 6, 2013
filing date -
Jun 13, 2005
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Abstract
A semiconductor crystal having a recombination-inhibiting semiconductor layer of a second conductive type that is disposed in the vicinity of the surface between a base contact region and emitter regions and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.
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