SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Sep 19, 2013
app pub date -
Feb 4, 2013
filing date -
Mar 19, 2012
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Abandoned
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Abstract
A semiconductor device includes a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; electrodes formed over the second semiconductor layer; and a third semiconductor layer formed on the second semiconductor layer; wherein the third semiconductor layer is formed so as to surround each element, in which the electrodes are formed, and wherein the third semiconductor layer is a semiconductor layer of a conductivity type whose polarity is opposite to that of carriers produced in the first semiconductor layer.
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