SHALLOW TRENCH ISOLATION IN DYNAMIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Sep 12, 2013
app pub date -
Mar 16, 2012
filing date -
Mar 12, 2012
priority date (Note) -
Abandoned
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Abstract
A manufacturing method of STI in DRAM includes the following steps. Step 1 is providing a substrate and step 2 is forming at least one trench in the substrate. Step 3 is doping at least one of side portions and bottom portions of the trench with a dopant. Step 4 is forming an oxidation inside the trench and step 5 is providing a planarization step to remove the oxidation. The stress of the corners of STI is reduced so as to modify the defect of the substrate and improve the DRAM variability in retention time.
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