FIELD STOP STRUCTURE, REVERSE CONDUCTING IGBT SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 12, 2013
app pub date -
Mar 8, 2013
filing date -
Mar 12, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A field stop structure is disclosed. The field stop structure is divided into a three-dimensional structure by a plurality of trenches formed on a back side of a silicon substrate and hence obtains a greater formation depth in the substrate and can achieve a higher ion activation efficiency. Moreover, a first electrode region of a fast recovered diode (FRD) is formed in the trenches, thereby enabling the integration of a FRD with an insulated gate bipolar transistor (IGBT) device. Methods for forming field stop structure and reverse conducting IGBT semiconductor device are also disclosed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully