AL-BASED ALLOY SPUTTERING TARGET AND PRODUCTION METHOD OF SAME
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United States of America Patent
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Sep 12, 2013
app pub date -
Oct 5, 2011
filing date -
Oct 8, 2010
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Abstract
There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 μm to 1.0 μm and a mean interparticle distance of from 0.01 μm to 10.0 μm.
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